n-channel enhancement mode power mosfet description the RM6003S2 u ses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. general features ? v ds =60v,i d =3a r ds(on) <105m @ v gs =10v r ds(on) < 125m @ v gs =4.5v ? high power and current handing capability ? lead free product is acquired ? surface mount package application ? battery switch ? dc/dc converter d g s schematic diagram marking and pin assignment sot-23 -3l top view package marking and ordering information device marking device device package reel size tape width quantity 6003 RM6003S2 sot-23-3l ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current-continuous i d 3 a drain current-pulsed (note 1) i dm 10 a maximum power dissipation p d 1.7 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 73.5 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 60 65 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a RM6003S2 2016-10 re v:o15
gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 1.0 1.2 1.9 v v gs =10v, i d =3a - 78 105 m drain-source on-state resistance r ds(on) v gs =4.5v, i d =3a - 95 125 m forward transconductance g fs v ds =15v,i d =2a 3 - - s dynamic characteristics (note4) input capacitance c lss - 247 - pf output capacitance c oss - 34 - pf reverse transfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 19.5 - pf switching characteristics (note 4) turn-on delay time t d(on) - 6 - ns turn-on rise time t r - 15 - ns turn-off delay time t d(off) - 15 - ns turn-off fall time t f v dd =30v,i d =1.5a v gs =10v,r gen =1 - 10 - ns total gate charge q g - 6 - nc gate-source charge q gs - 1 - nc gate-drain charge q gd v ds =30v,i d =3a, v gs =4.5v - 1.3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =3a - - 1.2 v diode forward current (note 2) i s - - 3 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2 . % 4. guaranteed by design, not subject to production " " " " " " "
vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d ) w ( r e w o p i d a ( t n e r r u c n i a r d - ? m ( e c n a t s i s e r - n o n o s d r ? ) i d ) a ( t n e r r u c n i a r d - rating and characteristics curves (RM6003S2) " " " " " " "
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d ) a ( t n e r r u c n i a r d - m ( e c n a t s i s e r - n o n o s d r ? ) ) v ( e g a t l o v e c r u o s - e t a g s g v e c n a t s i s e r - n o d e z i l a m r o n ) f p ( e c n a t i c a p a c c i s ) a ( t n e r r u c n i a r d e s r e v e r - rating and characteristics curves (RM6003S2) " " " " " " "
vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance e v i t c e f f e d e z i l a m r o n , ) t ( r m i l a m r e h t t n e i s n a r t p e c n a d e i d ) a ( t n e r r u c n i a r d - " " " " " " " rating and characteristics curves (RM6003S2)
sot-23-3l package information notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. " " " " " " "
rectron inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. rectron inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. data sheet specifications and its information contained are intended to provide a product description only. "typical" paramet- ers which may be included on rectron data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. rectron inc does not assume any liability arising out of the application or use of any product or circuit. rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of rectron inc. customers using or selling rectron components for use in such applications do so at their own risk and shall agree to fully indemnify rect- ron inc and its subsidiaries harmless against all claims, damages and expendit- ures. disclaimer notice
|
